20 1 5 / 0 4 / 20 ver.1 page 1 sp p 7001 k p - channel enhancement mode mosfet description applications the spp 7001k is the p - channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in - line power loss are needed in a very small outline surface mount package. ? powe r management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter features pin configuration (sot - 23) ? - 6 0v/ - 0 . 5 a,r ds(on) = 6 @v gs = - 10v ? - 6 0v/ - 0.25 a,r ds(on) = 10 @v gs = - 4.5v ? super high density cell de sign for extremely low r ds (on) ? exceptional on - resistance and maximum dc current capability ? sot - 23 package design part marking 7 0 1 k y w w
20 1 5 / 0 4 / 20 ver.1 page 2 sp p 7001 k p - channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking spp 7001k s23rg b sot - 23 701 k yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) spp 7001k s23rg b : tape reel ; pb C free ; halogen C free absoulte maximum ratings (t a =25 unless otherwise noted ) parameter symbol typical unit drain - source voltage v dss - 60 v gate C gss 20 v continuous drain current(t j =150 a =25 d - 0.5 a t a =70 dm - 1 a continuous source current(diode conduction) i s - 0.5 a power dissipation t a =25 d 1.25 w t a =70 j 150 stg - 55/150 ja
20 1 5 / 0 4 / 20 ver.1 page 3 sp p 7001 k p - channel enhancement mode mosfet electrical characteristics (t a =25 unle ss otherwise noted) parameter symbol conditions min. typ max. unit static drain - source breakdown voltage v (br)dss v gs =0v,i d = - 250u a - 60 v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250ua - 1 - 3 gate leakage current i gss v ds =0v,v gs = 20 v 10 u a zer o gate voltage drain current i dss v ds = - 6 0 v,v gs =0v - 1 ua v ds = - 6 0 v,v gs =0v t j =55 - 10 on - state drain current i d(on ) v ds Q - 5v,v gs = - 10 v - 1 a drain - source on - resistance r ds( on ) v gs = - 10 v,i d = - 0 .5 a 6 v gs = - 4 .5v,i d = - 0.25 a 10 forward transconductance g f s v ds = - 1 0 v,i d = - 0 .5a 1 s diode forward voltage v sd i s = - 0 . 2 a,v gs =0v - 1. 5 v dynamic total gate charge q g v ds = - 30 v, v gs = - 15 v i d = - 0 .5 a 2 nc gate - source charge q gs 0.53 gate - drain charge q gd 0.72 input capacitance c iss v ds = - 2 5v,v gs =0v f=1mhz 25 pf output capacitance c oss 13 reverse transfer capacitance c rss 7.3 turn - on time t d(on) v dd = - 25 v, i d = - 200m a, v gen = - 10 v 20 ns turn - off time t d(off) 35
20 1 5 / 0 4 / 20 ver.1 page 4 sp p 7001 k p - channel enhancement mode mosfet typical characteristics drain - current vs. gate - source voltage on - resistance vs. drain - current on - resistance vs. gate - source voilage drain - source current vs. drain - source voltage
20 1 5 / 0 4 / 20 ver.1 page 5 sp p 7001 k p - channel enhancement mode mosfet typical characteristics capacitance vs. drain - source voltage on - resistance vs. drain - current
20 1 5 / 0 4 / 20 ver.1 page 6 sp p 7001 k p - channel enhancement mode mosfet s ot - 23 package outline
20 1 5 / 0 4 / 20 ver.1 page 7 sp p 7001 k p - channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from i ts use. no license is granted by allegation or otherwise under any patent or patent rights of sync power corporation. conditions mentioned in this publication are subject to change without notice. this publication surpasses and replaces all information previously s upplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ? the sync power logo is a registered trademark of sync power corpora tion ? 20 14 sync power corporation C printed in taiwan C all rights reserved sync power corporation 7 f - 2 , no.3 - 1 , park street nankang district (nksp), taipei, taiwan 115 phone: 886 - 2 - 2655 - 8178 fax: 886 - 2 - 2655 - 8468 ? http://www.syncpower.com
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